2,207 research outputs found

    The evolution of a national research plan for computers in education in The Netherlands

    Get PDF
    This paper describes the evolution of a national research plan for computers and education in The Netherlands. This approach was initiated in 1983 and includes two phases: one from 1984 until 1988 and one from 1989 until 1992. The paper describes the research plans for the second phase, based upon the experiences of the first, and draws some general conclusions about the development of national research plans for computers in education

    New camera tube improves ultrasonic inspection system

    Get PDF
    Electron multiplier, incorporated into the camera tube of an ultrasonic imaging system, improves resolution, effectively shields low level circuits, and provides a high level signal input to the television camera. It is effective for inspection of metallic materials for bonds, voids, and homogeneity

    Survey of UK speech and language therapists’ assessment and treatment practices for people with progressive dysarthria

    Get PDF
    Background: Dysarthria knowledge is predominantly impairment-based. As a result, speech and language therapists (SLTs) have traditionally adopted impairment-focused management practices. However, guidance for best practice suggests that SLTs should consider the client holistically, including the impact of dysarthria beyond the impairment. Aims: To investigate the current assessment and treatment practices used by UK SLTs with clients with progressive dysarthria and to identify whether these satisfy the needs of SLTs in their everyday practice. To investigate the extent to which they consider oromotor abilities, intelligibility, functional communication, participation and interaction to be important regarding assessment and treatment decisions. To explore whether management decisions are affected by level of clinical experience or settings in which SLTs work. Methods & Procedures: An online survey of UK SLTs working with adults with progressive dysarthria. Outcomes & Results: A total of 119 SLTs completed the survey. Respondents considered that targeting the levels of impairment, activity and participation are important in the management of clients with progressive dysarthria, as recommended by clinical guidelines and recent research. However a particularly high proportion of respondents reported the use of impairment-based assessments. Respondents reported lacking the necessary tools to target interaction in assessment and intervention. The intervention that respondents use with clients varies according to the progressive disorder and dysarthria severity. There is evidence for a trend that less experienced SLTs and those working predominantly in hospital-based settings focus on the impairment, whereas more SLTs with more experience and those based in predominantly community-based settings look beyond the impairment. Conclusions & Implications: The values held by SLTs match guideline recommendations for best practice, however the clinical reality is that the assessment of progressive dysarthria remains predominantly impairment-focused. New tools need to be developed and integrated into practice to target interaction in assessment and intervention, to reduce the gap between best practice recommendations and clinical reality. Ongoing research into the effectiveness of SLT intervention with clients with progressive dysarthria is required to guide clinical management decisions

    Material growth and characterization for solid state devices

    Get PDF
    Manganese was used as the dopant for p-type InGaAs layers grown on semi-insulating (Fe-doped) and n-type (Sn-doped) InP substrates. Optical, electrical (Hall) and SIMS measurements were used to characterize the layers. Mn-diffusion into the substrate (during the growth of In GaAs) was observed only when Fe-doped substrates were used. Quaternary layers of two compositions corresponding to wavelengths (energy gaps) of approximated 1.52 micrometers were successfully grown at a constant temperature of 640 C and InP was grown in the temperature range of 640 C to 655 C. A study of the effect of pulses on the growth velocity of InP indicated no significant change as long as the average applied current was kept constant. A system for depositing films of Al2O3 by the pyrolysis of aluminum isopropoxide was designed and built. Deposited layers on Si were characterized with an ellipsometer and exhibited indices of refraction between 1.582 and 1.622 for films on the order of 3000 A thick. Undoped and p-type (Mn-doped) InGaAs epitaxial layers were also grown on Fe-doped InP substrates through windows in sputtered SiO2 (3200 A thick) layers
    • …
    corecore